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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION *With TO-126 package *Complement to type 2SD1691 *Low saturation voltage *Large current *High total power dissipation:PT=1.3W *Large current capability and wide SOA APPLICATIONS *DC-DC converter *Driver of solenoid or motor
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
2SB1151
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 20 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -7 -5 -8 -1 1.3 W UNIT V V V A A A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=-2.0A ;IB=-0.2A IC=-2.0A ;IB=-0.2A VCB=-50V; IE=0 VEB=-7V; IC=0 IC=-0.1A ; VCE=-1V IC=-2A ; VCE=-1V IC=-5A ; VCE=-2V 60 100 50 MIN
2SB1151
SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 hFE-3
TYP.
MAX -0.3 -1.2 -10 -10
UNIT V V A A
400
Switching times ton tstg tf Turn-on time Storage time Fall time IC=-2A; IB1=-IB2=-0.2A RL=5.0@;VCCA10V 0.15 0.78 0.18 1.0 2.5 1.0 s s s
hFE-2 Classifications M 100-200 L 160-320 K 200-400
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1151
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1151
4


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